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| SUP90N10-09 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) 0.0094 @ VGS = 10 V ID (A) 90 a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Package with Low Thermal Resistance APPLICATIONS D Automotive - 42-V Power Bus - DC/DC Conversion - Motor Drivers - Injection Systems TO-220AB D G GDS Top View SUP90N10-09 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 90a 64a 240 75 280 300c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72075 S-22125--Rev. A, 25-Nov-02 www.vishay.com Mounted)d Symbol RthJA RthJC Limit 40 0.5 Unit _C/W _ 1 SUP90N10-09 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 120 0.0075 0.0094 0.017 0.024 S W 100 V 2 4 "100 1 50 250 nA mA m mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 0.6 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W VDS = 50 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz 8700 740 450 140 41 41 20 110 65 100 30 170 100 150 ns 210 nC pF Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms m IF = 50 A, VGS = 0 V 1.0 70 5.5 0.19 90 240 1.5 140 10 0.35 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72075 S-22125--Rev. A, 25-Nov-02 SUP90N10-09 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 5V 100 150 100 TC = 125_C 50 25_C 50 4V 0 0 2 4 6 8 10 -55 _C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 250 TC = -55_C r DS(on) - On-Resistance ( W ) 200 g fs - Transconductance (S) 25_C 150 0.012 0.015 On-Resistance vs. Drain Current 125_C 0.009 VGS = 10 V 100 0.006 50 0.003 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 12000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 10000 Ciss C - Capacitance (pF) 8000 16 VDS = 50 V ID = 85 A 12 6000 8 4000 2000 Crss 4 Coss 0 0 20 40 60 80 100 0 0 50 100 150 200 250 VDS - Drain-to-Source Voltage (V) Document Number: 72075 S-22125--Rev. A, 25-Nov-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP90N10-09 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 125 Drain Source Breakdown vs. Junction Temperature 120 100 V (BR)DSS (V) IAV (A) @ TA = 25_C I Dav (a) 10 115 ID = 10 mA 110 105 1 IAV (A) @ TA = 150_C 100 0.1 0.00001 0.0001 0.001 0.01 0.1 1 95 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72075 S-22125--Rev. A, 25-Nov-02 SUP90N10-09 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 Safe Operating Area Limited by rDS(on) 100 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 80 100 ms, 10 60 1 ms 10 ms dc, 100 ms 40 20 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72075 S-22125--Rev. A, 25-Nov-02 www.vishay.com 5 |
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